A UNIFIED MOSFET CHANNEL CHARGE MODEL FOR DEVICE MODELING IN CIRCUIT SIMULATION

Citation
Yh. Cheng et al., A UNIFIED MOSFET CHANNEL CHARGE MODEL FOR DEVICE MODELING IN CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 17(8), 1998, pp. 641-644
Citations number
10
Categorie Soggetti
Computer Science Hardware & Architecture","Computer Science Interdisciplinary Applications","Computer Science Hardware & Architecture","Computer Science Interdisciplinary Applications","Engineering, Eletrical & Electronic
ISSN journal
02780070
Volume
17
Issue
8
Year of publication
1998
Pages
641 - 644
Database
ISI
SICI code
0278-0070(1998)17:8<641:AUMCCM>2.0.ZU;2-6
Abstract
In this paper, we present a simple and accurate MOSFET channel charge model for device modeling in circuit simulation. The model can guarant ee good continuities and smooth transitions of charge, capacitance, cu rrent, and transconductance from subthreshold to strong inversion with a unified analytical expression, and agrees with the experimental dat a well at various process and bias conditions from subthreshold and st rong inversion, including the moderate inversion region of growing imp ortance for low-voltage/power circuits.