Yh. Cheng et al., A UNIFIED MOSFET CHANNEL CHARGE MODEL FOR DEVICE MODELING IN CIRCUIT SIMULATION, IEEE transactions on computer-aided design of integrated circuits and systems, 17(8), 1998, pp. 641-644
In this paper, we present a simple and accurate MOSFET channel charge
model for device modeling in circuit simulation. The model can guarant
ee good continuities and smooth transitions of charge, capacitance, cu
rrent, and transconductance from subthreshold to strong inversion with
a unified analytical expression, and agrees with the experimental dat
a well at various process and bias conditions from subthreshold and st
rong inversion, including the moderate inversion region of growing imp
ortance for low-voltage/power circuits.