Vs. Dneprovskii et al., LINEAR AND NONLINEAR EXCITONIC ABSORPTION IN SEMICONDUCTING QUANTUM WIRES CRYSTALLIZED IN A DIELECTRIC MATRIX, Journal of experimental and theoretical physics (Print), 87(2), 1998, pp. 382-387
Spectra of linear and nonlinear absorption of GaAs and CdSe semiconduc
ting quantum wires crystallized in a transparent dielectric matrix (in
side chrysotile-asbestos nanotubes) have been measured. Their features
are interpreted in terms of excitonic transitions and filling of the
exciton phase space in the quantum wires. The theoretical model presen
ted here has allowed us to calculate the energies of excitonic transit
ions that are in qualitative agreement with experimental data. The cal
culated exciton binding energies in quantum wires are a factor of seve
ral tens higher than in bulk semiconductors. The cause of this increas
e in the exciton binding energy is not only the size quantization, but
also the ''dielectric enhancement,'' i.e., stronger attraction betwee
n electrons and holes owing to the large difference between permittivi
ties of the semiconductor and dielectric matrix. (C) 1998 American Ins
titute of Physics. [S1063-7761(98)02508-6].