EPITAXIAL-GROWTH OF CEO2(1 0 0) FILMS ON SI(1 0 0) SUBSTRATES BY DUAL-ION BEAMS REACTIVE SPUTTERING

Authors
KANG JF XIONG GC LIAN GJ WANG YY HAN RQ
Citation
Jf. Kang et al., EPITAXIAL-GROWTH OF CEO2(1 0 0) FILMS ON SI(1 0 0) SUBSTRATES BY DUAL-ION BEAMS REACTIVE SPUTTERING, Solid state communications, 108(4), 1998, pp. 225-227
Citations number
7
Categorie Soggetti
Physics, Condensed Matter
Journal title
Solid state communications → ACNP
ISSN journal
00381098
Volume
108
Issue
4
Year of publication
1998
Pages
225 - 227
Database
ISI
SICI code
0038-1098(1998)108:4<225:EOC00F>2.0.ZU;2-M
Abstract
The epitaxial growth of CeO2(100) films on (100) silicon substrates by dual ion beams sputtering was studied. The measurements of X-ray thet a-2 theta pattern, phi-scan and rocking curve indicated that the CeO2 films had good epitaxial characteristics with (100) orientation. The e xperiments showed that the substrate temperature had only a weak influ ence on the orientation in a wide temperature range. In contrast to th is, the oxygen pressure during the deposition had a strong influence o n the growth. (C) 1998 Published by Elsevier Science Ltd.