RESONANT RAMAN-SCATTERING IN POLYCRYSTALLINE SILICON THIN-FILMS

In this letter, we report the results obtained on polycrystalline sili con thin films using Raman spectrometry in resonance with the silicon direct band gap. First, we show that accurate information about crysta llites can be obtained in these experimental conditions, without any d econvolution of Raman spectra. Second, we apply the technique to estim ate the mechanical stress of polycrystalline silicon thin films. (C) 1 998 American Institute of Physics.