COINCIDENCE SITE LATTICE (CSL) GRAIN-BOUNDARIES AND GOSS TEXTURE DEVELOPMENT IN FE-3-PERCENT SI ALLOYS

The role of CSL grain boundaries in Goss [(100)<100>] texture developm ent in Fe-3% Si has been investigated by direct crystallographic orien tation measurement of (1) primary recrystallized specimens and (2) spe cimens following the early stages of secondary recrystallization. Goss oriented grains in the primary matrix were found to occur with a low frequency, and were not observed to have an initial size advantage or occur in clusters; however, these grains were determined to be frequen tly bounded by low Sigma (i.e. Sigma 3-29) CSL interfaces. By calculat ing the possible orientation relationships between hypothetical grain orientations and the experimentally determined texture of the primary matrix, Goss oriented grains were determined to be statistically more likely to produce mobile low Sigma CSL orientation relationships durin g random growth through the primary matrix than other major grain text ure components. A deficit of these CSL interfaces, relative to the det ermined probability of occurrence during random grain growth, was expe rimentally determined for interfaces bounding Goss grains following se condary recrystallization treatments; this deficit was rationalized on the basis of preferential replacement by general (or higher Sigma) in terfaces due to enhanced mobility of these low Sigma CSL grain boundar ies. Copyright (C) 1996 Acta Metallurgica Inc.