HYDROGENATION AND ANNEALING EFFECTS IN P-TYPE ZNSE THIN-FILMS GROWN ON GAAS(100) SUBSTRATES

Photoluminescence (PL) and Raman scattering measurements have been car ried out to investigate the hydrogenation and annealing effects in p-t ype ZnSe epilayers grown on n-type GaAs (100) substrates by molecular beam epitaxy. After hydrogenation, the PL spectra showed that the deep acceptor-bound exciton peak disappeared and that the peak position of the donor-acceptor pair peak shifted to a higher energy. When the hyd rogenated ZnSe/GaAs heterostructure was annealed at 300 degrees C, a b ound exciton due to neutral accepters appeared. The Raman intensity of the plasma longitudinal optical-phonon-coupling mode increased after hydrogenation. These results indicate that the crystallinity of the p- type ZnSe epilayers grown on n-type GaAs substrates is improved by hyd rogenation and that hydrogenated and annealed ZnSe films grown on GaAs substrates hold promise for potential application as buffer layers fo r the growth of Zn1-xMgxSySe1-y active layers. (C) 1998 American Insti tute of Physics.