TEMPERATURE EFFECT ON THE ROUGHNESS OF THE FORMATION INTERFACE OF P-TYPE POROUS SILICON

We have studied the influence of the anodization temperature on the fo rmation of porous Si for different current intensities. We have monito red the porosity, growth rate, luminescence, refractive index, and por ous Si/bulk Si interface roughness. A strong decrease of the roughness was obtained for low temperature anodization. These results were used to fabricate distributed Bragg reflectors with a remarkable optical q uality (R-max=99.5%) for low doped p-type silicon. (C) 1998 American I nstitute of Physics.