TEMPERATURE EFFECT ON THE ROUGHNESS OF THE FORMATION INTERFACE OF P-TYPE POROUS SILICON

Citation
S. Setzu et al., TEMPERATURE EFFECT ON THE ROUGHNESS OF THE FORMATION INTERFACE OF P-TYPE POROUS SILICON, Journal of applied physics, 84(6), 1998, pp. 3129-3133
Citations number
12
Categorie Soggetti
Physics, Applied
ISSN journal
00218979
Volume
84
Issue
6
Year of publication
1998
Pages
3129 - 3133
Database
ISI
SICI code
0021-8979(1998)84:6<3129:TEOTRO>2.0.ZU;2-3
Abstract
We have studied the influence of the anodization temperature on the fo rmation of porous Si for different current intensities. We have monito red the porosity, growth rate, luminescence, refractive index, and por ous Si/bulk Si interface roughness. A strong decrease of the roughness was obtained for low temperature anodization. These results were used to fabricate distributed Bragg reflectors with a remarkable optical q uality (R-max=99.5%) for low doped p-type silicon. (C) 1998 American I nstitute of Physics.