Y. Murakami et al., EFFECTS OF OXYGEN-RELATED DEFECTS ON THE LEAKAGE CURRENT OF SILICON PN JUNCTIONS/, Journal of applied physics, 84(6), 1998, pp. 3175-3186
The reverse-bias leakage characteristics of silicon pn junctions have
been investigated with particular attention to the effects of various
types of oxygen-related defects, such as oxygen precipitates, oxidatio
n induced stacking fault, and,grown-in defects. The effects of oxygen-
related defects on the leakage current of pn junctions in intrinsic ge
ttering wafers and precipitation annealed wafers have been investigate
d quantitatively, and the field oxidation temperature used tp form pn
junctions has been found to be an important factor in determining the
pn junction leakage current because oxygen-related defects are formed
during low temperature field oxidation. It has also been found that gr
own-in oxidation induced stacking faults degrade the leakage character
istics. Grown-in defects that are well known to degrade the oxide brea
kdown characteristics were found to have some effects on the increase
of the leakage current. In addition, it is recognized that the leakage
current of pn junctions formed in wafers that have a relatively high
concentration of interstitial oxygen has a transient component, caused
by oxygen-related hole traps, which might also be the origin of the 1
/f noise observed in pn junctions. (C) 1998 American Institute of Phys
ics.