TEMPERATURE-DEPENDENCE OF CONVENTIONAL AND EFFECTIVE PYROELECTRIC COEFFICIENTS FOR COMPOSITIONALLY GRADED BAXSR1-XTIO3 FILMS

Ferroelectric thin films (similar to 1.2 mu m) of BaxSr1-xTiO3 with gr adients in composition normal to the growth surface were formed on pla tinum substrates by metalorganic decomposition. Effective (pseudo) pyr oelectric coefficients as large as 0.06 mu C/cm(2) K have been obtaine d from these active ferroelectric devices under the application of an ac field (charge pumping). In contrast, a value of only -0.003 mu C/cm (2) K has been measured for the conventional pyroelectric coefficient. (C) 1998 American Institute of Physics.