Js. Becker et al., TRACE AND ULTRATRACE ANALYSIS OF GALLIUM-ARSENIDE BY DIFFERENT MASS-SPECTROMETRIC TECHNIQUES, Journal of analytical atomic spectrometry (Print), 13(9), 1998, pp. 983-987
The capability of different solid-state mass spectrometric methods [sp
ark source mass spectrometry (SSMS), laser ablation inductively couple
d plasma mass spectrometry (LA-ICP-MS), radiofrequency glow discharge
mass spectrometry (rf GDMS) and secondary ion mass spectrometry (SIMS)
] in comparison with inductively coupled plasma mass spectrometry (ICP
-MS) was investigated by the trace analysis of GaAs. For trace analysi
s using solid-state mass spectrometry, a semiconducting laboratory GaA
s standard (using high-purity GaAs) doped with Zn, B, Si, Ge, Sn, Sb,
P, S, Se and Te (in the mu g g(-1) concentration range) was prepared b
y the liquid encapsulation vertical Bridgeman technique. A selected pi
ece of the synthetic laboratory GaAs standard was investigated directl
y by SIMS, SSMS, rf GDMS and LA-ICP-MS. For the quantification of SIMS
measurements single element ion-implanted GaAs certified reference st
andards were used. After dissolution of the GaAs sample in high-purity
HNO3-H2O2, the concentrations of the doped elements mere measured by
ICP-MS and inductively coupled plasma atomic emission spectrometry (IC
P-AES). By using the results of SIMS, ICP-MS and ICP-AES for the selec
ted piece of the synthetic laboratory GaAs standard, relative sensitiv
ity coefficients (RSCs) of the elements in SSMS, rf GDMS and LA-ICP-MS
were determined. The experimentally determined RSCs were used for cor
recting measured concentrations in an unknown GaAs sample. In order to
reduce matrix effects in ICP-MS, a procedure for complete GaAs matrix
separation in a chlorine-argon stream at 280 degrees C was evaluated.
The recoveries of 24 elements after the chlorination of GaAs were det
ermined to be nearly 100% (except for Sn and Ta), Ultratrace analysis
of semiconducting GaAs after matrix separation was carried out by doub
le-focusing sector field ICP-MS. The detection limits of ultratrace el
ements in GaAs after matrix separation (in the tom ng g(-1) concentrat
ion range) mere better by about one order of magnitude compared with m
easurements without matrix separation and were comparable to those obt
ained by solid-state mass spectrometry.