GIANT MAGNETORESISTANCE CAUSED BY MAGNETIC-FIELD-SENSITIVE RESONANT-TUNNELING IN A RANDOM MULTIBARRIER SEMICONDUCTOR SUPERLATTICE

Authors
Citation
Sj. Xiong et Sz. Yu, GIANT MAGNETORESISTANCE CAUSED BY MAGNETIC-FIELD-SENSITIVE RESONANT-TUNNELING IN A RANDOM MULTIBARRIER SEMICONDUCTOR SUPERLATTICE, Superlattices and microstructures, 24(3), 1998, pp. 215-220
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
07496036
Volume
24
Issue
3
Year of publication
1998
Pages
215 - 220
Database
ISI
SICI code
0749-6036(1998)24:3<215:GMCBMR>2.0.ZU;2-#
Abstract
By using a transmission probability formalism, we perform a calculatio n for the conductance related to the tunnelling of electrons through a semiconductor multibarrier superlattice with special thickness random ness in the presence of a magnetic field. Because of the sharp resonan ce of the tunnelling in such a structure, the current is highly sensit ive to the variation of the in-plane magnetic field. The calculated re sults show a giant magnetoresistance even for small strength of the he ld. Possible applications of this effect are discussed. (C) 1998 Acade mic Press.