DIELECTRIC-RELAXATION BEHAVIOR OF BI-SRTIO3 - I - THE LOW-TEMPERATUREPERMITTIVITY PEAK

Citation
Y. Zhi et al., DIELECTRIC-RELAXATION BEHAVIOR OF BI-SRTIO3 - I - THE LOW-TEMPERATUREPERMITTIVITY PEAK, Journal of the European Ceramic Society, 18(11), 1998, pp. 1613-1619
Citations number
28
Categorie Soggetti
Material Science, Ceramics
ISSN journal
09552219
Volume
18
Issue
11
Year of publication
1998
Pages
1613 - 1619
Database
ISI
SICI code
0955-2219(1998)18:11<1613:DBOB-I>2.0.ZU;2-8
Abstract
The dielectric properties of (Sr1-1.5xBix)TiO3 (0.002 less than or equ al to x less than or equal to 0.167) ceramics were systematically stud ied. The temperature dependence of the complex-permittivity was measur ed irt the temperature range of 10-300 K. Permittivity peaks with obvi ous frequency dispersion were observed and with the increase of the Bi content, the temperature of the permittivity maximum of each one is s hifted to higher temperatures. In the high temperature side of the per mittivity peaks, notable departure from the Curie-Weiss law was observ ed. The relaxation behaviour is characterised in the present paper. Th e effect of Bi on the dielectric relaxation behaviour and the physical mechanism giving polarisation are briefly discussed. (C) 1998 Elsevie r Science Limited. AII rights reserved.