Y. Zhi et al., DIELECTRIC-RELAXATION BEHAVIOR OF BI-SRTIO3 - III - DIELECTRIC-PROPERTIES IN THE TEMPERATURE-RANGE OF 300-600 K, Journal of the European Ceramic Society, 18(11), 1998, pp. 1629-1635
(Sr1-1.5xBix)TiO3 ceramics show several polarisation and conduction me
chanisms in different temperature ranges. bl the present paper, the pe
rmittivity peaks that occur-red in the temperature range from 300 to 6
00 K are discussed for the samples both as-sinter ed and O-2 or N-2 an
nealed. The activation energy for conduction in the temperature range
in which these permittivity peaks occurred is around 0.59-0.78 eV. Thi
s suggests that the carriers responsible for the conduction are coming
from the thermal excitation of electrons from the V-0(.) state to the
conduction band. The activation energy for dielectric relaxation is i
n the range of 0.64-086 eV. The discussion on the cor relation between
dielectric relaxation and conduction, led to suggest that the permitt
ivity peaks are related to a dipole-like dielectric relaxation either
for the as-sintered samples aswell as for the ones annealed in O-2. Ho
wever, for the samples annealed in Nz, the results indicate that the p
olarisation mechanism is related to the trap-controlled ac conduction.
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