INTERFACES OF SEMICONDUCTOR HETEROJUNCTIONS STUDIED USING AN FEL

Authors
NISHI K MOROTA N MURASE Y NAKASHIMA H
Citation
K. Nishi et al., INTERFACES OF SEMICONDUCTOR HETEROJUNCTIONS STUDIED USING AN FEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 144(1-4), 1998, pp. 107-114
Citations number
36
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
144
Issue
1-4
Year of publication
1998
Pages
107 - 114
Database
ISI
SICI code
0168-583X(1998)144:1-4<107:IOSHSU>2.0.ZU;2-T
Abstract
Interfaces of the ZnSe/GaAs, ZnMgSSe/GaAs, GaAlAs/GaAs, CdS/CdTe and I nAs/AlSb heterojunctions which are of much interest in optoelectronics were investigated using the free electron laser internal photoemissio n (FEL-IPE) technique. This technique is based on photocurrent spectro scopy utilizing the tunability and intense peak power of the FEL opera tive in the infrared range. It is shown that FEL-IPE makes it possible to measure the band discontinuities of these heterojunctions more pre cisely and is very effective for evaluating the interfaces of several types of semiconductor heterojunctions. (C) 1998 Elsevier Science B.V. All rights reserved.