K. Nishi et al., INTERFACES OF SEMICONDUCTOR HETEROJUNCTIONS STUDIED USING AN FEL, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 144(1-4), 1998, pp. 107-114
Interfaces of the ZnSe/GaAs, ZnMgSSe/GaAs, GaAlAs/GaAs, CdS/CdTe and I
nAs/AlSb heterojunctions which are of much interest in optoelectronics
were investigated using the free electron laser internal photoemissio
n (FEL-IPE) technique. This technique is based on photocurrent spectro
scopy utilizing the tunability and intense peak power of the FEL opera
tive in the infrared range. It is shown that FEL-IPE makes it possible
to measure the band discontinuities of these heterojunctions more pre
cisely and is very effective for evaluating the interfaces of several
types of semiconductor heterojunctions. (C) 1998 Elsevier Science B.V.
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