SILICON NANOSTRUCTURE FABRICATION USING IR-FELS AND ITS OPTICAL-PROPERTIES

Authors
MAEDA Y UMEZAWA K HAYASHI Y
Citation
Y. Maeda et al., SILICON NANOSTRUCTURE FABRICATION USING IR-FELS AND ITS OPTICAL-PROPERTIES, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 144(1-4), 1998, pp. 152-159
Citations number
13
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
144
Issue
1-4
Year of publication
1998
Pages
152 - 159
Database
ISI
SICI code
0168-583X(1998)144:1-4<152:SNFUIA>2.0.ZU;2-J
Abstract
Novel silicon nanostructures were fabricated from hydrogenated amorpho us silicon (a-Si:H) by irradiation with infrared Free Electron Lasers (IR-FELs). SEM and XTEM observations and Raman spectra show that the f abricated materials have nanometer or micrometer-sized complicated fib ers (Si microfibers) including large amounts of several nanometer-size d Si nanocrystals (nc-Si) embedded in the glassy SiO2 matrices. Size d ependent visible photoluminescence (PL) from nc-Si in the Si microfibe rs was observed at room temperature. The visible PL mechanism of nc-Si and formation mechanism of the Si microfibers due to the FEL irradiat ion are discussed. (C) 1998 Elsevier Science B.V. All rights reserved.