FREE-ELECTRON LASER (FEL) ANNEALING OF DIAMOND

Authors
OGINO S SHIOMI H FUJIMORI N AWAZU K MAEDA Y
Citation
S. Ogino et al., FREE-ELECTRON LASER (FEL) ANNEALING OF DIAMOND, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 144(1-4), 1998, pp. 181-185
Citations number
4
Categorie Soggetti
Instument & Instrumentation","Nuclear Sciences & Tecnology","Physics, Atomic, Molecular & Chemical","Physics, Nuclear
Journal title
Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms → ACNP
ISSN journal
0168583X
Volume
144
Issue
1-4
Year of publication
1998
Pages
181 - 185
Database
ISI
SICI code
0168-583X(1998)144:1-4<181:FL(AOD>2.0.ZU;2-H
Abstract
Free Electron Laser (FEL) with wide wavelength tunability has been dev eloped and used for various applications. We report the structural-cha nges in P-ion-implanted diamond when we can achieve resonant excitatio n of the vibrations of specific bonds in the lattice of target (P-C) b y using FEL. The change of property was analyzed by SIMS and Raman spe ctroscopy. After 5.8 mu m-FEL irradiation, we observed the crystalliza tion of amorphous structure which was induced by P-ion-implantation. T hese results indicated the FEL annealing of diamond at room temperatur e. (C) 1998 Published by Elsevier Science B.V. All rights reserved.