HIGH-FLUX HIGH-EFFICIENCY TRANSPARENT-SUBSTRATE ALGAINP GAP LIGHT-EMITTING-DIODES/

Authors
HOFLER GE CARTERCOMAN C KRAMES MR GARDNER NF KISH FA TAN TS LOH B POSSELT J COLLINS D SASSER G
Citation
Ge. Hofler et al., HIGH-FLUX HIGH-EFFICIENCY TRANSPARENT-SUBSTRATE ALGAINP GAP LIGHT-EMITTING-DIODES/, Electronics Letters, 34(18), 1998, pp. 1781-1782
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
18
Year of publication
1998
Pages
1781 - 1782
Database
ISI
SICI code
0013-5194(1998)34:18<1781:HHTAGL>2.0.ZU;2-#
Abstract
Data are presented demonstrating led-orange-yellow spectrum (AlxGa1-x) (0.5)In0.5P/GaP high-power light-emitting diode (LED) lamps which emit 10-20lm of flux while simultaneously maintaining luminous efficiencie s of greater than or equal to 201m/W. The flux emitted by these device s represents an improvement of about five times compared to convention al high-brightness transparent-substrate (AlxGa1-x)(0.5)In0.5P/GaP LED lamps.