TRANSCONDUCTANCE ENHANCEMENT AT LOW-TEMPERATURES IN DEEP-SUBMICROMETER MOSFETS

Authors
SZELAG B BALESTRA F
Citation
B. Szelag et F. Balestra, TRANSCONDUCTANCE ENHANCEMENT AT LOW-TEMPERATURES IN DEEP-SUBMICROMETER MOSFETS, Electronics Letters, 34(18), 1998, pp. 1793-1794
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
18
Year of publication
1998
Pages
1793 - 1794
Database
ISI
SICI code
0013-5194(1998)34:18<1793:TEALID>2.0.ZU;2-#
Abstract
The impact of the quasi-Fermi potential gradient on transconductance e nhancement at low temperatures is studied for silicon NMOSFETs. Using experimental measurements and two-dimensional numerical simulations, i t is shown that the influence of this gradient on transconductance bec omes significant in the deep submicrometre range. This effect is expla ined in terms of reduction of the intrinsic channel length and moving of the Fermi level closer to the band edge at low temperatures.