ULTRA-HIGH SENSITIVITY INGAAS ALGAAS/INGAAS TRIPLE-COUPLED QUANTUM-WELL INFRARED PHOTODETECTOR/

Authors
CHIANG JC LI SS
Citation
Jc. Chiang et Ss. Li, ULTRA-HIGH SENSITIVITY INGAAS ALGAAS/INGAAS TRIPLE-COUPLED QUANTUM-WELL INFRARED PHOTODETECTOR/, Electronics Letters, 34(18), 1998, pp. 1794-1795
Citations number
7
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
34
Issue
18
Year of publication
1998
Pages
1794 - 1795
Database
ISI
SICI code
0013-5194(1998)34:18<1794:USIATQ>2.0.ZU;2-4
Abstract
An ultra-high sensitivity triple-coupled quantum well infrared photode tector using a high-strain n-type InGaAs/AlGaAs/InGaAs asymmetrical co upled quantum well structure has been developed for 8-14 mu m detectio n. The maximum responsivity and detectivity with 45 degrees facet illu mination were found to be 2.71A/W and 7.21 x 10(10) cmH(1/2)/W at lamb da(p) = 9.6 mu m, V-b = -5V, and T = 30K.