Vm. Glazov et Vb. Koltsov, CONTRIBUTION OF THE ELECTRON SUBSYSTEM STATE VARIATIONS TO THE MELTING ENTROPY OF COVALENT CRYSTALS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 102(9), 1998, pp. 1095-1101
Citations number
34
Categorie Soggetti
Chemistry Physical
Journal title
Berichte der Bunsengesellschaft fur Physikalische Chemie
Analysis of the whole complex of the electrophysical and thermodynamic
properties of semiconductors allowed us to conclude that melting entr
opy can be presented by three basic components, i.e. by the position,
vibration and electron contributions. Possible methods of calculating
the above contributions have been discussed, e.g, it has been shown th
at the electron contribution to the melting entropy of semiconductors
that are metallized makes up a considerable part of the total melting
entropy, which accounts for the anomalous values of the melting entrop
y of the substances discussed.