CONTRIBUTION OF THE ELECTRON SUBSYSTEM STATE VARIATIONS TO THE MELTING ENTROPY OF COVALENT CRYSTALS

Citation
Vm. Glazov et Vb. Koltsov, CONTRIBUTION OF THE ELECTRON SUBSYSTEM STATE VARIATIONS TO THE MELTING ENTROPY OF COVALENT CRYSTALS, Berichte der Bunsengesellschaft fur Physikalische Chemie, 102(9), 1998, pp. 1095-1101
Citations number
34
Categorie Soggetti
Chemistry Physical
Journal title
Berichte der Bunsengesellschaft fur Physikalische Chemie
ISSN journal
00059021 → ACNP
Volume
102
Issue
9
Year of publication
1998
Pages
1095 - 1101
Database
ISI
SICI code
0005-9021(1998)102:9<1095:COTESS>2.0.ZU;2-K
Abstract
Analysis of the whole complex of the electrophysical and thermodynamic properties of semiconductors allowed us to conclude that melting entr opy can be presented by three basic components, i.e. by the position, vibration and electron contributions. Possible methods of calculating the above contributions have been discussed, e.g, it has been shown th at the electron contribution to the melting entropy of semiconductors that are metallized makes up a considerable part of the total melting entropy, which accounts for the anomalous values of the melting entrop y of the substances discussed.