THE NICKEL-RICH PART OF THE GA-NI PHASE-DIAGRAM AND THE CORRESPONDINGPHASE-RELATIONS IN THE TERNARY GA-NI-SB SYSTEM

In the past years, metal/III-V compound semiconductor interfaces have been investigated intensively in order to find a suitable metallizatio n scheme meeting the required performance, reproducibility and stabili ty criteria. Equilibrium phase diagrams provide a base for understandi ng the interfacial reactions, hence solid state equilibria at 600 and 900 degrees C in the Ga-Ni-Sb system have been experimentally determin ed and are presented in this article. In the course of the work the ni ckel-rich part of the Ga-Ni phase diagram has been revised by means of DTA and the diffusion couple technique. This study was undertaken to clarify the true temperature range of stability for the compounds Ga2N i3 and Ga9Ni13 that is of significant importance for establishing the Ga-Ni-Sb phase diagram.