METAL-INSULATOR-TRANSITION IN SI-X (X=P,B) - ANOMALOUS RESPONSE TO A MAGNETIC-FIELD

Citation
Mp. Sarachik et al., METAL-INSULATOR-TRANSITION IN SI-X (X=P,B) - ANOMALOUS RESPONSE TO A MAGNETIC-FIELD, Physical review. B, Condensed matter, 58(11), 1998, pp. 6692-6695
Citations number
27
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
58
Issue
11
Year of publication
1998
Pages
6692 - 6695
Database
ISI
SICI code
0163-1829(1998)58:11<6692:MIS(-A>2.0.ZU;2-7
Abstract
The zero-temperature magnetoconductivity of just-metallic Si:P scales with magnetic field H and dopant concentration n lying on a single uni versal curve: sigma(n,H)/sigma(n,0)= G[H(-delta)Delta n] with a magnet ic-field crossover exponent delta approximate to 2. We note that Si:P, Si:B, and Si:As all have unusually large crossover exponents near 2, and suggest that this anomalously weak response to a magnetic field, D elta n(c)proportional to H-delta is a common feature of uncompensated doped semiconductors.