Mp. Sarachik et al., METAL-INSULATOR-TRANSITION IN SI-X (X=P,B) - ANOMALOUS RESPONSE TO A MAGNETIC-FIELD, Physical review. B, Condensed matter, 58(11), 1998, pp. 6692-6695
The zero-temperature magnetoconductivity of just-metallic Si:P scales
with magnetic field H and dopant concentration n lying on a single uni
versal curve: sigma(n,H)/sigma(n,0)= G[H(-delta)Delta n] with a magnet
ic-field crossover exponent delta approximate to 2. We note that Si:P,
Si:B, and Si:As all have unusually large crossover exponents near 2,
and suggest that this anomalously weak response to a magnetic field, D
elta n(c)proportional to H-delta is a common feature of uncompensated
doped semiconductors.