CALCULATION OF LANDAU-LEVELS IN SEMICONDUCTOR QUANTUM DOTS IN A HIGH MAGNETIC-FIELD AND AT A HIGH OPTICAL-EXCITATION

Authors
NOMURA S SAMUELSON L PRYOR C PISTOL ME STOPA M UCHIDA K MIURA N SUGANO T AOYAGI Y
Citation
S. Nomura et al., CALCULATION OF LANDAU-LEVELS IN SEMICONDUCTOR QUANTUM DOTS IN A HIGH MAGNETIC-FIELD AND AT A HIGH OPTICAL-EXCITATION, Physical review. B, Condensed matter, 58(11), 1998, pp. 6744-6747
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
58
Issue
11
Year of publication
1998
Pages
6744 - 6747
Database
ISI
SICI code
0163-1829(1998)58:11<6744:COLISQ>2.0.ZU;2-W
Abstract
Landau-level formations are studied theoretically for highly optically populated InP strained self-organized quantum dots for magnetic field s below 45 T. A self-consistent Hartree calculation is performed in re al space with the higher-order finite difference method. A transition of the discrete states due to a potential confinement at 0 T to Landau -level-like structures for high magnetic fields is demonstrated.