Ab initio quasiparticle energies are calculated for the 2H, 4H, and 6H
polytypes of SiC within the GW approximation for the self-energy. The
starting point is a calculation within the pseudopotential local-dens
ity approximation framework. The calculated fundamental gaps of 3.15,
3.35, and 3.24 eV for 2H, 4H, and 6H SiC, respectively, show very good
agreement with experimental data. The energy dependence of the screen
ed interaction is modeled by a plasmon pole model from which the plasm
on band structures are obtained.