ROLE OF INTERFACE ROUGHNESS SCATTERING IN SELF-CONSISTENT RESONANT-TUNNELING-DIODE SIMULATIONS

The effects of interface roughness scattering in a resonant-tunneling diode are examined with the self-consistent Born and the multiple sequ ential scattering algorithm for various interface roughness correlatio n lengths. The effect of a self-consistent treatment of the scattering self-energies with the quantum charge and the electrostatic and excha nge-correlation potentials is demonstrated. The effects of the scatter ing assisted charge and the exchange and correlation potential on the spurious bistability obtained in simulations of a symmetric resonant-t unneling diode is shown.