Sk. Singh et al., SATURATION SPECTROSCOPY AND ELECTRONIC-STATE LIFETIMES IN A MAGNETIC-FIELD IN INAS ALXGA1-XSB SINGLE QUANTUM-WELLS/, Physical review. B, Condensed matter, 58(11), 1998, pp. 7286-7291
Saturation spectroscopy of electronic states in InAs/AlxGa1-xSb single
-quantum-well structures has been carried out with the UCSB free-elect
ron laser. An effective Landau-level lifetime is extracted from the cy
clotron-resonance (CR) saturation results on a semiconducting sample (
x = 0.5) with the help of an n-level rate equation model. The effectiv
e lifetime shows strong oscillations (greater than an order of magnitu
de) with laser frequency with minima shifted to higher frequencies tha
n given by the simple parabolic magnetophonon resonance condition due
to large nonparabolicity in the InAs conduction band. Similar saturati
on studies of two lines (the X line and CR) in a ''semimetallic'' samp
le (x= 0.1) show markedly different effective lifetimes, demonstrating
that the two lines are of different origin.