FEATURES OF THE ELECTRICAL COMPENSATION OF BISMUTH IMPURITIES IN PBSE

Self-compensation is studied in bulk samples of PbSe : (Bi, Se-ex) pre pared by a metal-ceramic method. The dependence of the carrier concent ration on the amount of excess selenium is investigated for various bi smuth concentrations. Comparison of the experimental data with calcula ted data shows that the donorlike activity of bismuth accommodated in the cation sublattice is compensated by doubly ionized lead vacancies. Nonmonotonic behavior of the dependence of the carrier concentration on the selenium excess is observed in some series of samples due to th e incorporation of Bi atoms into both the cation and anion sublattices . (C) 1998 American Institute of Physics.