EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES

Authors
CHALDYSHEV VV KUNITSYN AE TRETYAKOV VV FALEEV NN PREOBRAZHENSKII VV PUTYATO MA SEMYAGIN BR
Citation
Vv. Chaldyshev et al., EFFECT OF ISOVALENT INDIUM DOPING ON EXCESS ARSENIC IN GALLIUM-ARSENIDE GROWN BY MOLECULAR-BEAM EPITAXY AT LOW-TEMPERATURES, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 692-695
Citations number
11
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
7
Year of publication
1998
Pages
692 - 695
Database
ISI
SICI code
1063-7826(1998)32:7<692:EOIIDO>2.0.ZU;2-L
Abstract
X-ray spectral microanalysis, optical transmission measurements at nea r-infrared wavelengths, and x-ray diffractometry are used to show that the isovalent indium doping of gallium arsenide during molecular-beam epitaxy at low temperatures leads to an increase in the concentration of excess arsenic trapped in the growing layer. (C) 1998 American Ins titute of Physics.