PREPARATION AND PROPERTIES OF GES2 SINGLE-CRYSTALS

Authors
GOLUBKOV AV DUBROVSKII GB SHELYKH AI
Citation
Av. Golubkov et al., PREPARATION AND PROPERTIES OF GES2 SINGLE-CRYSTALS, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 734-735
Citations number
2
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
7
Year of publication
1998
Pages
734 - 735
Database
ISI
SICI code
1063-7826(1998)32:7<734:PAPOGS>2.0.ZU;2-R
Abstract
Single crystals of GeS2 are grown by two methods: crystallization from a melt and chemical vapor transport. All crystals are found to have a monoclinic structure with the unit-cell parameters a = 11.45 Angstrom , b = 16.09 Angstrom, c = 6.7 Angstrom, and beta = 91 degrees. The ref lection and transmission spectra are measured in the region of the abs orption edge. The gap width is found to be equal to 3.2 eV. (C) 1998 A merican Institute of Physics.