PHOTOVOLTAIC EFFECT IN IN I-III-VI2-THIN-FILM SURFACE-BARRIER STRUCTURES/

Surface-barrier structures have been prepared on films of the ternary compounds CuInTe2, AgGaTe2, and AgInTe2 and the solid-solution Cu0.5Ag 0.5InSe2. When these structures are illuminated, the photovoltaic effe ct is observed. It has been established that structures based on the t ernary compound p-AgGaTe2 possess the highest photovoltaic sensitivity . It has been shown that films of I-III-VI2 compounds and the solid so lution Cu0.5Ag0.5InSe2 obtained by laser deposition can be used to cre ate wideband photoconverters of natural radiation. (C) 1998 American I nstitute of Physics.