THEORETICAL-STUDY OF THE THRESHOLD CHARACTERISTICS OF INGAN MULTIQUANTUM-WELL LASERS

The threshold characteristics of InGaN multiquantum well lasers are in vestigated. A detailed analysis of the dependence of the threshold cur rent on the quantum-well parameters and the temperature is performed. It is shown that, in comparison with long-wavelength lasers, InGaN las ers have a qualitatively different dependence of the threshold current on the quantum-well parameters (well width and number of quantum well s). The possibility of optimizing a InGaN laser structure is analyzed with the aim of improving the threshold characteristics and increasing the peak radiated power. (C) 1998 American Institute of Physics.