EFFECT OF DEPOSITION AND ANNEALING CONDITIONS ON THE OPTICAL-PROPERTIES OF AMORPHOUS-SILICON

Authors
MASHIN AI ERSHOV AV KHOKHLOV DA
Citation
Ai. Mashin et al., EFFECT OF DEPOSITION AND ANNEALING CONDITIONS ON THE OPTICAL-PROPERTIES OF AMORPHOUS-SILICON, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 782-784
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
7
Year of publication
1998
Pages
782 - 784
Database
ISI
SICI code
1063-7826(1998)32:7<782:EODAAC>2.0.ZU;2-H
Abstract
The spectral characteristics of the refractive index and the extinctio n coefficient in the range 0.6-2.0 eV for amorphous silicon films prep ared by electron-beam evaporation with variation of the substrate temp erature, deposition rate, and annealing temperature in air are present ed. The results obtained are discussed on the basis of the changes in the Penn gap energy as a function of the indicated preparation and tre atment conditions. (C) 1998 American Institute of Physics.