USE OF DIRECT WAFER BONDING OF SILICON FOR FABRICATING SOLAR-CELL STRUCTURES WITH VERTICAL P-N-JUNCTIONS

Authors
VORONKOV VB GUK EG KOZLOV VA SHVARTS MZ SHUMAN VB
Citation
Vb. Voronkov et al., USE OF DIRECT WAFER BONDING OF SILICON FOR FABRICATING SOLAR-CELL STRUCTURES WITH VERTICAL P-N-JUNCTIONS, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 789-791
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
7
Year of publication
1998
Pages
789 - 791
Database
ISI
SICI code
1063-7826(1998)32:7<789:UODWBO>2.0.ZU;2-2
Abstract
A technology based on ion implantation and the direct wafer bonding of p(+)-p-n(+) structures has been developed for multijunction silicon s olar cells. The internal quantum efficiency of such structures is clos e to unity in the wavelength range 350-900 nm. (C) 1998 American Insti tute of Physics.