INVESTIGATION OF THE DEVICE CHARACTERISTICS OF A LOW-THRESHOLD QUANTUM-DOT LASER EMITTING AT 1.9 MU-M

Authors
ZHUKOV AE EGOROV AY KOVSH AR USTINOV VM ZAITSEV SV GORDEEV NY KOPCHATOV VI LUNEV AV TSATSULNIKOV AF VOLOVIK BV LEDENTSOV NN KOPEV PS
Citation
Ae. Zhukov et al., INVESTIGATION OF THE DEVICE CHARACTERISTICS OF A LOW-THRESHOLD QUANTUM-DOT LASER EMITTING AT 1.9 MU-M, Semiconductors (Woodbury, N.Y.), 32(7), 1998, pp. 795-797
Citations number
14
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
7
Year of publication
1998
Pages
795 - 797
Database
ISI
SICI code
1063-7826(1998)32:7<795:IOTDCO>2.0.ZU;2-I
Abstract
InAs quantum dots in a InGaAs matrix grown on an InP substrate by mole cular-beam epitaxy are employed as the active region of an injection l aser. Lasing via quantum-dot states is observed in the temperature ran ge 77-200 K. At the lowest threshold current density 11 A/cm(2) the ra diation wavelength is equal to 1.894 mu m (77 K). (C) 1998 American In stitute of Physics.