DEFECT FORMATION IN THIN COMPENSATED PBSE - CL FILMS

Citation
Va. Zykov et al., DEFECT FORMATION IN THIN COMPENSATED PBSE - CL FILMS, Russian journal of applied chemistry, 71(4), 1998, pp. 543-549
Citations number
12
Categorie Soggetti
Chemistry Applied
ISSN journal
10704272
Volume
71
Issue
4
Year of publication
1998
Pages
543 - 549
Database
ISI
SICI code
1070-4272(1998)71:4<543:DFITCP>2.0.ZU;2-X
Abstract
Defect formation was studied in block epitaxial PbSe : Cl films satura ted with selenium, prepared by condensation at various temperatures fr om molecular beams of vapor from a source charge containing 0.4 and 0. 75% of chlorine. Scanning tunnel microscopy and low-temperature tunnel spectroscopy were used to analyze the surface topography of the films . Specific features of chlorine transport through the vapor phase are evaluated.