LUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED SILICON OBTAINED BY THE GLOW-DISCHARGE METHOD

Authors
TERUKOV EI KONKOV OI KUDOYAROVA VK GUSEV OB WEISER G
Citation
Ei. Terukov et al., LUMINESCENCE OF ERBIUM IN AMORPHOUS HYDROGENATED SILICON OBTAINED BY THE GLOW-DISCHARGE METHOD, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 884-885
Citations number
8
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors (Woodbury, N.Y.) → ACNP
ISSN journal
10637826
Volume
32
Issue
8
Year of publication
1998
Pages
884 - 885
Database
ISI
SICI code
1063-7826(1998)32:8<884:LOEIAH>2.0.ZU;2-3
Abstract
We report the first observation of efficient room-temperature photolum inescence of erbium in amorphous hydrogenated silicon prepared by the plasma chemical-deposition method. (C) 1998 American Institute of Phys ics.