Dn. Goryachev et al., CHARACTERISTIC FEATURES OF THE INTERACTION OF POROUS SILICON WITH HEAVY-WATER, Semiconductors (Woodbury, N.Y.), 32(8), 1998, pp. 910-912
The interaction of porous silicon (por-Si) with heavy water (D2O) was
investigated by means of time-resolved photoluminescence and infrared
Fourier spectroscopy. It is shown that contact of per-Si with D2O lead
s to anomalously rapid oxidation of its surface - at a rate at least a
n order of magnitude higher than the oxidation rate of per-Si in ordin
ary (protium) water. The oxidation process transforms the chemical com
position of the per-Si surface and is accompanied by abrupt changes in
the spectral and temporal characteristics of the photoluminescence. A
ssumptions are made concerning the nature of the interaction of porous
silicon with heavy water. (C) 1998 American Institute of Physics.