EXCITON SPIN RELAXATION IN SEMICONDUCTOR QUANTUM-WELLS - THE ROLE OF DISORDER

Citation
H. Nickolaus et al., EXCITON SPIN RELAXATION IN SEMICONDUCTOR QUANTUM-WELLS - THE ROLE OF DISORDER, Physical review letters, 81(12), 1998, pp. 2586-2589
Citations number
14
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
81
Issue
12
Year of publication
1998
Pages
2586 - 2589
Database
ISI
SICI code
0031-9007(1998)81:12<2586:ESRISQ>2.0.ZU;2-B
Abstract
Ultrafast pulse measurements on high-quality (Zn,Cd)Se/ZnSe quantum we lls yield the very surprising result that the decay of the exciton spi n transients after resonant excitation with circularly polarized light is even faster than the exciton dephasing time. We demonstrate that t his fact is a direct consequence of (alloy) disorder which gives rise to a kind of inhomogeneous broadening and associated interference effe cts for spin dynamics across the band of localized exciton states. [S0 031-9007(98)07100-2].