ABLATION OF GAAS BY INTENSE, ULTRAFAST ELECTRONIC EXCITATION FROM HIGHLY-CHARGED IONS

Authors
SCHENKEL T HAMZA AV BARNES AV SCHNEIDER DH BANKS JC DOYLE BL
Citation
T. Schenkel et al., ABLATION OF GAAS BY INTENSE, ULTRAFAST ELECTRONIC EXCITATION FROM HIGHLY-CHARGED IONS, Physical review letters, 81(12), 1998, pp. 2590-2593
Citations number
33
Categorie Soggetti
Physics
Journal title
Physical review letters → ACNP
ISSN journal
00319007
Volume
81
Issue
12
Year of publication
1998
Pages
2590 - 2593
Database
ISI
SICI code
0031-9007(1998)81:12<2590:AOGBIU>2.0.ZU;2-N
Abstract
We have measured total ablation rates and secondary ion yields from un doped GaAs(100) interacting with slow (v = 6.6 x 10(5) m/s), very high ly charged ions. Ablation rates increase strongly as a function of pro jectile charge. Some 1400 target atoms are removed when a single Th70 ion deposits a potential energy of 152.6 keV within a few femtosecond s into a nanometer-sized target volume. We discuss models for ablation of semiconductors by intense, ultrafast electronic excitation. [S0031 -9007(98)07165-8].