LOW-TEMPERATURE DEPOSITION OF CUIN(SXSE1-X)(2) THIN-FILMS BY IONIZED CLUSTER BEAM TECHNIQUE

CuIn(SxSe1-x)(2) thin films were prepared on Mo-coated soda-lime mass substrates by the ionized cluster beam (ICB) technique, in which Cu. I n2S3 and Se vapors were ionized and accelerated. The substrate tempera ture was kept at T-s=400 degrees C. The films were characterized using X-ray diffraction (XRD), a scanning electron microscope (SEM), and an electron-probe microanalyzer (EPMA). It was found that polycrystallin e films with improved grain size were obtained when the substrate temp erature exceeded 250 degrees C. Using the ICB technique, thin film sol ar cell devices based on these CuIn(SxSe1-x)(2) films were fabricated. The photovoitaic effect was confirmed in substrate-type structure sol ar cells :vith the low-temperature deposition of ICB-grown CuIn(SxSe1- x)(2) thin films.