SIMULATION ON A NOVEL BODY-DRIVEN SILICON-ON-INSULATOR METAL-OXIDE-SILICON FIELD-EFFECT-TRANSISTOR FOR SUB-0.1 MU-M SMALL LOGIC SWING OPERATION

A body-driven silicon-on-insulator metal-oxide-silicon field-effect-tr ansistor (body-driven SOI-MOSFET, BD-MOS) is proposed, and the device characteristics are estimated using a device simulator. This device ca n remove excess holes within several picoseconds. Additional body cont act. which requires additional device area, is nor required for removi ng holes. A small S factor (76 mV/dec.) and a small V-th roll-off (Del ta V-th = 15 mV for Delta V-d = 0.4 V) were obtained for the channel l ength of 0.08 mu m without using very thin gate oxide. An enhancement operation and the large drain current required for compiementary-MOS(C MOS)-compatible circuits are achieved.