FABRICATION PROCEDURES AND CHARACTERISTICS OF 6H-SIC AU-GATE METAL-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR FOR USE AT HIGH-TEMPERATURES

A 6H-SiC Au-gate metal-semiconductor field-effect transistor (MESFET) was fabricated by reactive ion etching (RIE) for device isolation and ion implantation for the n(-) contact regions of the source and drain. The device exhibited a pinch-off voltage of -9 V, transconductance (g (m)) of 5.3 mS/mm, and gate breakdown voltage of -200 V. The character istics of the MESFET were investigated at high temperatures. This MESF ET can be operated at 400 degrees C.