CHARACTERIZATION OF PB1-XLAXTIO3 THIN-FILMS BY THE RADIO-FREQUENCY MAGNETRON SPUTTERING TECHNIQUE

Microstructures and electrical properties of polycrystalline and orien ted (Pb1-xLax)TiO2 (PLT) thin films deposited by rf magnetron sputteri ng using a ceramic (Pb0.7La0.3)TiO3 target having 20 mol% excess PbO w ere investigated. The grain size of oriented films deposited on La0.5S r0.5CoO3(LSCO)/MgO was larger than that of polycrystalline PLT films o n LSCO/Pt/Ti/SiO2/Si substrates. The dielectric constant and the dissi pation factor of polycrystalline films measured at 10 kHz were 340 and 0.014, respectively. On the other hand, the dielectric constant and t h dissipation factor of oriented films were 810 and 0.08, respectively . Both the polycrystalline and the oriented PLT films deposited at 500 degrees C exhibited a paraelectric properties. The leakage current de nsities of the polycrystalline and the oriented PLT films were about 8 .0 < 10(-8) and 2.5 x 10(-7) A/cm(2) at 10 kV/cm, respectively.