We measured the current passing between a sample and a scanning tunnel
ing microscope (STM) tip under conditions of X-ray irradiation. As sho
wn in our previous reports, this STM tip current originated from elect
ron emission on the sample surface. For high precision STM tip current
measurement, we applied an X-ray modulation technique using an X-ray
chopper and a lock-in amplifier. X-rays modulated by the X-ray chopper
irradiated the sample surface of the STM, and the STM tip current was
detected using the lock-in amplifier. The largest and most stable out
put from the lock-in amplifier was obtained under the experimental con
ditions of low modulation frequency (similar to 10 Hz), strong X-ray i
ntensity, and high STM bias voltage. Compared with measuring the STM t
ip current directly without the modulation technique, the precision or
this measurement is threefold better.