FABRICATION OF SUBMICRON GAP STRUCTURES USING DIRECTLY-DEPOSITED AMORPHOUS-CARBON WIRES

An amorphous carbon (a-C) wire was directly deposited using scanning e lectron microscopy to determine a sub-micron gap in coplanar-type meta l electrodes. The wire was employed to a lift-off mask for defining th e gap between source and drain electrodes. By newly employing a ZnO bu ffer layer for removing the a-C wire, a gap size of 60 nm was successf ully achieved. Moreover, this process was applied to fabricate a super conducting weak link device using a heavily phosphorus-doped Si thin f ilm as a channel material.