We consider the effect of reducing the density of final hole states fo
r Auger processes on the Auger rate at room temperature and 77K at den
sities near lasing thresholds. The system of interest is a strain-comp
ensated superlattice based on the InAs/GaInSb material system with a 3
.7 mu m band gap. At 77K the Auger lifetime is reduced by two orders o
f magnitude, while the change at 300K is less than a factor of two. We
conclude that final-state optimization in this particular structure,
while pronounced at 77K, has little effect at 300K. (C) 1998 Optical S
ociety of America.