ANODIZATION OF N-GAAS AND P-GAAS IN ETHYLENE GLYCOL-WATER-TARTARIC ACID MIXTURE

This paper describes the pulsed constant current anodization of n(+) a nd p(+)-GaAs in ethylene glycol-water-tartaric acid (AGW) mixture, up to 17 mA cm(-2). A 0.26 mu m thick film is obtained for a final voltag e of 135V at 4.3 mA cm(-2) pulsed current density. Cyclic voltammetry showed that the initial growth of a monolayer anodic pride can be desc ribed by a charge transfer with uncompensated cell resistance model. T he relationship between peak current, peak voltage and scan rate has b een verified for this process, based on the above model.