ENHANCEMENT OF REACTIVITY IN AU ETCHING BY PULSE-TIME-MODULATED CL-2 PLASMA

In Al, Au and Pt metal etching processes, low etching rate and low etc hing selectivity are serious problems. To achieve a breakthrough in th ese problems, metal etching by pulse-time-modulated plasma was investi gated. In particular, the Au etching rate wets increased significantly in the pulsed plasma even when the ion energy decreases. However, an increase in the etching rate cannot be observed in Al etching. As a re sult, it is speculated that the increase in the Au etching rate is cau sed by the increase in the evaporation rate of Au etching products, wh ich results from the injection of negative ions.