STRUCTURAL AND BINDING-PROPERTIES OF VACANCY CLUSTERS IN SILICON

Authors
BONGIORNO A COLOMBO L DELARUBIA TD
Citation
A. Bongiorno et al., STRUCTURAL AND BINDING-PROPERTIES OF VACANCY CLUSTERS IN SILICON, Europhysics letters, 43(6), 1998, pp. 695-700
Citations number
15
Categorie Soggetti
Physics
Journal title
Europhysics letters → ACNP
ISSN journal
02955075
Volume
43
Issue
6
Year of publication
1998
Pages
695 - 700
Database
ISI
SICI code
0295-5075(1998)43:6<695:SABOVC>2.0.ZU;2-#
Abstract
By means of large-scale quantum simulations we investigate the formati on and binding of vacancy clusters V-n in silicon for n less than or e qual to 35. We show that different growth patterns exist and that an i nterplay between energy and topology arguments determines the most sta ble aggregates.