ELECTRONIC-STRUCTURE OF (001)ALAS-INAS-GAAS MULTILAYER STRUCTURES

Authors
VELASCO VR FERNANDEZALVAREZ L ALDEA A VLAEV S MONSIVAIS G GARCIAMOLINER F
Citation
Vr. Velasco et al., ELECTRONIC-STRUCTURE OF (001)ALAS-INAS-GAAS MULTILAYER STRUCTURES, Surface science, 413, 1998, pp. 397-404
Citations number
34
Categorie Soggetti
Chemistry Physical
Journal title
Surface science → ACNP
ISSN journal
00396028
Volume
413
Year of publication
1998
Pages
397 - 404
Database
ISI
SICI code
0039-6028(1998)413:<397:EO(MS>2.0.ZU;2-7
Abstract
The electronic structure of different (001) (AlAs)(m)(InAs)(1)(GaAs)(m ) multilayer structures is studied. We have thus seen the influence of the relative thicknesses of the constituent materials and of the posi tions of the InAs principal layers in the multilayer structures on the energy eigenstates and on their spatial localization. The calculation s are based on an sp(3)s empirical tight-binding model and on the sur face Green function matching method. (C) 1998 Elsevier Science B.V. Al l rights reserved.